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FCH099N65S3_F155

FCH099N65S3_F155

For Reference Only

Part Number FCH099N65S3_F155
PNEDA Part # FCH099N65S3_F155
Description MOSFET N-CH 650V 30A TO247-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCH099N65S3_F155 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCH099N65S3_F155
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCH099N65S3_F155, FCH099N65S3_F155 Datasheet (Total Pages: 10, Size: 442.22 KB)
PDFFCH099N65S3_F155 Datasheet Cover
FCH099N65S3_F155 Datasheet Page 2 FCH099N65S3_F155 Datasheet Page 3 FCH099N65S3_F155 Datasheet Page 4 FCH099N65S3_F155 Datasheet Page 5 FCH099N65S3_F155 Datasheet Page 6 FCH099N65S3_F155 Datasheet Page 7 FCH099N65S3_F155 Datasheet Page 8 FCH099N65S3_F155 Datasheet Page 9 FCH099N65S3_F155 Datasheet Page 10

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FCH099N65S3_F155 Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs61nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2480pF @ 400V
FET Feature-
Power Dissipation (Max)227W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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