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FCI25N60N-F102

FCI25N60N-F102

For Reference Only

Part Number FCI25N60N-F102
PNEDA Part # FCI25N60N-F102
Description MOSFET N-CH 600V 25A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,902
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCI25N60N-F102 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCI25N60N-F102
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCI25N60N-F102, FCI25N60N-F102 Datasheet (Total Pages: 10, Size: 708.21 KB)
PDFFCI25N60N Datasheet Cover
FCI25N60N Datasheet Page 2 FCI25N60N Datasheet Page 3 FCI25N60N Datasheet Page 4 FCI25N60N Datasheet Page 5 FCI25N60N Datasheet Page 6 FCI25N60N Datasheet Page 7 FCI25N60N Datasheet Page 8 FCI25N60N Datasheet Page 9 FCI25N60N Datasheet Page 10

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FCI25N60N-F102 Specifications

ManufacturerON Semiconductor
SeriesSupreMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs74nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3352pF @ 100V
FET Feature-
Power Dissipation (Max)216W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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