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FCP190N60E

FCP190N60E

For Reference Only

Part Number FCP190N60E
PNEDA Part # FCP190N60E
Description MOSFET N-CH 600V TO220-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 14,448
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCP190N60E Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCP190N60E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCP190N60E, FCP190N60E Datasheet (Total Pages: 11, Size: 807.45 KB)
PDFFCP190N60E Datasheet Cover
FCP190N60E Datasheet Page 2 FCP190N60E Datasheet Page 3 FCP190N60E Datasheet Page 4 FCP190N60E Datasheet Page 5 FCP190N60E Datasheet Page 6 FCP190N60E Datasheet Page 7 FCP190N60E Datasheet Page 8 FCP190N60E Datasheet Page 9 FCP190N60E Datasheet Page 10 FCP190N60E Datasheet Page 11

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FCP190N60E Specifications

ManufacturerON Semiconductor
SeriesSuperFET® II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs82nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3175pF @ 25V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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