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FCP190N65F

FCP190N65F

For Reference Only

Part Number FCP190N65F
PNEDA Part # FCP190N65F
Description MOSFET N-CH 650V 20.6A TO220-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,672
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCP190N65F Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCP190N65F
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCP190N65F, FCP190N65F Datasheet (Total Pages: 10, Size: 487.5 KB)
PDFFCP190N65F Datasheet Cover
FCP190N65F Datasheet Page 2 FCP190N65F Datasheet Page 3 FCP190N65F Datasheet Page 4 FCP190N65F Datasheet Page 5 FCP190N65F Datasheet Page 6 FCP190N65F Datasheet Page 7 FCP190N65F Datasheet Page 8 FCP190N65F Datasheet Page 9 FCP190N65F Datasheet Page 10

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FCP190N65F Specifications

ManufacturerON Semiconductor
SeriesFRFET®, SuperFET® II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3225pF @ 25V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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