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FCP190N65S3

FCP190N65S3

For Reference Only

Part Number FCP190N65S3
PNEDA Part # FCP190N65S3
Description MOSFET N-CH 650V 17A TO220-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 21,144
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCP190N65S3 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCP190N65S3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCP190N65S3, FCP190N65S3 Datasheet (Total Pages: 10, Size: 373.77 KB)
PDFFCP190N65S3 Datasheet Cover
FCP190N65S3 Datasheet Page 2 FCP190N65S3 Datasheet Page 3 FCP190N65S3 Datasheet Page 4 FCP190N65S3 Datasheet Page 5 FCP190N65S3 Datasheet Page 6 FCP190N65S3 Datasheet Page 7 FCP190N65S3 Datasheet Page 8 FCP190N65S3 Datasheet Page 9 FCP190N65S3 Datasheet Page 10

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FCP190N65S3 Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1350pF @ 400V
FET Feature-
Power Dissipation (Max)144W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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