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FCP650N80Z

FCP650N80Z

For Reference Only

Part Number FCP650N80Z
PNEDA Part # FCP650N80Z
Description MOSFET N-CH 800V 10A
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 14,784
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCP650N80Z Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCP650N80Z
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCP650N80Z, FCP650N80Z Datasheet (Total Pages: 10, Size: 667.43 KB)
PDFFCP650N80Z Datasheet Cover
FCP650N80Z Datasheet Page 2 FCP650N80Z Datasheet Page 3 FCP650N80Z Datasheet Page 4 FCP650N80Z Datasheet Page 5 FCP650N80Z Datasheet Page 6 FCP650N80Z Datasheet Page 7 FCP650N80Z Datasheet Page 8 FCP650N80Z Datasheet Page 9 FCP650N80Z Datasheet Page 10

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FCP650N80Z Specifications

ManufacturerON Semiconductor
SeriesSuperFET® II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4.5V @ 800µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1565pF @ 100V
FET Feature-
Power Dissipation (Max)162W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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