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FCP850N80Z

FCP850N80Z

For Reference Only

Part Number FCP850N80Z
PNEDA Part # FCP850N80Z
Description MOSFET N-CH 800V 8A
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,596
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCP850N80Z Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCP850N80Z
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCP850N80Z, FCP850N80Z Datasheet (Total Pages: 10, Size: 663.28 KB)
PDFFCP850N80Z Datasheet Cover
FCP850N80Z Datasheet Page 2 FCP850N80Z Datasheet Page 3 FCP850N80Z Datasheet Page 4 FCP850N80Z Datasheet Page 5 FCP850N80Z Datasheet Page 6 FCP850N80Z Datasheet Page 7 FCP850N80Z Datasheet Page 8 FCP850N80Z Datasheet Page 9 FCP850N80Z Datasheet Page 10

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FCP850N80Z Specifications

ManufacturerON Semiconductor
SeriesSuperFET® II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1315pF @ 100V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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