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FCPF165N65S3L1

FCPF165N65S3L1

For Reference Only

Part Number FCPF165N65S3L1
PNEDA Part # FCPF165N65S3L1
Description MOSFET N-CH 650V 19A TO220F-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 17,472
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCPF165N65S3L1 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCPF165N65S3L1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCPF165N65S3L1, FCPF165N65S3L1 Datasheet (Total Pages: 10, Size: 320.42 KB)
PDFFCPF165N65S3L1 Datasheet Cover
FCPF165N65S3L1 Datasheet Page 2 FCPF165N65S3L1 Datasheet Page 3 FCPF165N65S3L1 Datasheet Page 4 FCPF165N65S3L1 Datasheet Page 5 FCPF165N65S3L1 Datasheet Page 6 FCPF165N65S3L1 Datasheet Page 7 FCPF165N65S3L1 Datasheet Page 8 FCPF165N65S3L1 Datasheet Page 9 FCPF165N65S3L1 Datasheet Page 10

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FCPF165N65S3L1 Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1415pF @ 400V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 150°C
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3
Package / CaseTO-220-3 Full Pack

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