Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FCPF16N60NT

FCPF16N60NT

For Reference Only

Part Number FCPF16N60NT
PNEDA Part # FCPF16N60NT
Description MOSFET N-CH 600V TO-220-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 13,806
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCPF16N60NT Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCPF16N60NT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCPF16N60NT, FCPF16N60NT Datasheet (Total Pages: 12, Size: 752.9 KB)
PDFFCP16N60N-F102 Datasheet Cover
FCP16N60N-F102 Datasheet Page 2 FCP16N60N-F102 Datasheet Page 3 FCP16N60N-F102 Datasheet Page 4 FCP16N60N-F102 Datasheet Page 5 FCP16N60N-F102 Datasheet Page 6 FCP16N60N-F102 Datasheet Page 7 FCP16N60N-F102 Datasheet Page 8 FCP16N60N-F102 Datasheet Page 9 FCP16N60N-F102 Datasheet Page 10 FCP16N60N-F102 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FCPF16N60NT Datasheet
  • where to find FCPF16N60NT
  • ON Semiconductor

  • ON Semiconductor FCPF16N60NT
  • FCPF16N60NT PDF Datasheet
  • FCPF16N60NT Stock

  • FCPF16N60NT Pinout
  • Datasheet FCPF16N60NT
  • FCPF16N60NT Supplier

  • ON Semiconductor Distributor
  • FCPF16N60NT Price
  • FCPF16N60NT Distributor

FCPF16N60NT Specifications

ManufacturerON Semiconductor
SeriesSupreMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs199mOhm @ 8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs52.3nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2170pF @ 100V
FET Feature-
Power Dissipation (Max)35.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

BSC084P03NS3EGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

14.9A (Ta), 78.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

8.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3V @ 110µA

Gate Charge (Qg) (Max) @ Vgs

57.7nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

4240pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-5

Package / Case

8-PowerTDFN

STD30N10F7

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

24mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

1270pF @ 50V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SI7812DN-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

37mOhm @ 7.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

840pF @ 35V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

STU7N65M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.15Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 100V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

TK56A12N1,S4X

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 28A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

69nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4200pF @ 60V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

Recently Sold

MT25QL01GBBB8E12-0SIT

MT25QL01GBBB8E12-0SIT

Micron Technology Inc.

IC FLASH 1G SPI 133MHZ 24TPBGA

ULN2003ADR2G

ULN2003ADR2G

ON Semiconductor

IC PWR RELAY 7NPN 1:1 16SO

TC4426AEOA

TC4426AEOA

Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8SOIC

EMS22A50-D28-LT6

EMS22A50-D28-LT6

Bourns

ROTARY ENCODER MAGNETIC 1024PPR

NL453232T-3R3J-PF

NL453232T-3R3J-PF

TDK

FIXED IND 3.3UH 355MA 800 MOHM

PIC18F63J11-I/PT

PIC18F63J11-I/PT

Microchip Technology

IC MCU 8BIT 8KB FLASH 64TQFP

MBR0540-TP

MBR0540-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 500MA SOD123

DS26521LN+

DS26521LN+

Maxim Integrated

IC TXRX T1/E1/J1 64-LQFP

PIC32MX250F128D-I/PT

PIC32MX250F128D-I/PT

Microchip Technology

IC MCU 32BIT 128KB FLASH 44TQFP

LTC2950IDDB-1#TRMPBF

LTC2950IDDB-1#TRMPBF

Linear Technology/Analog Devices

IC PUSH BUTTON ON/OFF CTRLR 8DFN

RCLAMP0854P.TCT

RCLAMP0854P.TCT

Semtech

TVS DIODE 5.5V 30V SLP1616P6

FDD86540

FDD86540

ON Semiconductor

MOSFET N-CH 60V 50A DPAK-3