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FCPF190N65S3L1

FCPF190N65S3L1

For Reference Only

Part Number FCPF190N65S3L1
PNEDA Part # FCPF190N65S3L1
Description MOSFET N-CH 650V 14A TO220F-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 18,792
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCPF190N65S3L1 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCPF190N65S3L1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCPF190N65S3L1, FCPF190N65S3L1 Datasheet (Total Pages: 10, Size: 296.31 KB)
PDFFCPF190N65S3L1 Datasheet Cover
FCPF190N65S3L1 Datasheet Page 2 FCPF190N65S3L1 Datasheet Page 3 FCPF190N65S3L1 Datasheet Page 4 FCPF190N65S3L1 Datasheet Page 5 FCPF190N65S3L1 Datasheet Page 6 FCPF190N65S3L1 Datasheet Page 7 FCPF190N65S3L1 Datasheet Page 8 FCPF190N65S3L1 Datasheet Page 9 FCPF190N65S3L1 Datasheet Page 10

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FCPF190N65S3L1 Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 7A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.4mA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1225pF @ 400V
FET Feature-
Power Dissipation (Max)33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3
Package / CaseTO-220-3 Full Pack

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