Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FCPF250N65S3L1

FCPF250N65S3L1

For Reference Only

Part Number FCPF250N65S3L1
PNEDA Part # FCPF250N65S3L1
Description MOSFET N-CH 650V 12A TO220F-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,412
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCPF250N65S3L1 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCPF250N65S3L1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCPF250N65S3L1, FCPF250N65S3L1 Datasheet (Total Pages: 10, Size: 297.56 KB)
PDFFCPF250N65S3L1 Datasheet Cover
FCPF250N65S3L1 Datasheet Page 2 FCPF250N65S3L1 Datasheet Page 3 FCPF250N65S3L1 Datasheet Page 4 FCPF250N65S3L1 Datasheet Page 5 FCPF250N65S3L1 Datasheet Page 6 FCPF250N65S3L1 Datasheet Page 7 FCPF250N65S3L1 Datasheet Page 8 FCPF250N65S3L1 Datasheet Page 9 FCPF250N65S3L1 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FCPF250N65S3L1 Datasheet
  • where to find FCPF250N65S3L1
  • ON Semiconductor

  • ON Semiconductor FCPF250N65S3L1
  • FCPF250N65S3L1 PDF Datasheet
  • FCPF250N65S3L1 Stock

  • FCPF250N65S3L1 Pinout
  • Datasheet FCPF250N65S3L1
  • FCPF250N65S3L1 Supplier

  • ON Semiconductor Distributor
  • FCPF250N65S3L1 Price
  • FCPF250N65S3L1 Distributor

FCPF250N65S3L1 Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1010pF @ 400V
FET Feature-
Power Dissipation (Max)31W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

IPI65R660CFDXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

660mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id

4.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

615pF @ 100V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

FDP038AN06A0

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

17A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

124nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6400pF @ 25V

FET Feature

-

Power Dissipation (Max)

310W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

DMP3085LSS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

70mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

563pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

STP45NF3LL

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 22.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 25V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

53A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

22mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

3120pF @ 25V

FET Feature

-

Power Dissipation (Max)

138W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

TLP785(GRH-TP6,F)

TLP785(GRH-TP6,F)

Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-SMD

SMCJ36A

SMCJ36A

Taiwan Semiconductor Corporation

TVS DIODE 36V 58.1V SMC

NTGS5120PT1G

NTGS5120PT1G

ON Semiconductor

MOSFET P-CH 60V 1.8A 6-TSOP

ADM3202ARNZ-REEL

ADM3202ARNZ-REEL

Analog Devices

IC TRANSCEIVER FULL 2/2 16SOIC

MAX3491EESD+T

MAX3491EESD+T

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

M24M02-DRMN6TP

M24M02-DRMN6TP

STMicroelectronics

IC EEPROM 2M I2C 1MHZ 8SO

SMCJ5.0CA

SMCJ5.0CA

TVS DIODE 5V 9.2V DO214AB

PMEG4010EH,115

PMEG4010EH,115

Nexperia

DIODE SCHOTTKY 40V 1A SOD123F

USBLC6-2SC6

USBLC6-2SC6

STMicroelectronics

TVS DIODE 5.25V 17V SOT23-6

XC7K70T-2FBG484I

XC7K70T-2FBG484I

Xilinx

IC FPGA 285 I/O 484FCBGA

CDRH127/LDNP-220MC

CDRH127/LDNP-220MC

Sumida

FIXED IND 22UH 4.7A 36.4 MOHM

BA6209

BA6209

Rohm Semiconductor

IC MOTOR DRIVER 6V-18V 10HSIP