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FCU850N80Z

FCU850N80Z

For Reference Only

Part Number FCU850N80Z
PNEDA Part # FCU850N80Z
Description MOSFET N-CH 800V 6A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 17,250
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCU850N80Z Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCU850N80Z
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCU850N80Z, FCU850N80Z Datasheet (Total Pages: 11, Size: 1,082.08 KB)
PDFFCD850N80Z Datasheet Cover
FCD850N80Z Datasheet Page 2 FCD850N80Z Datasheet Page 3 FCD850N80Z Datasheet Page 4 FCD850N80Z Datasheet Page 5 FCD850N80Z Datasheet Page 6 FCD850N80Z Datasheet Page 7 FCD850N80Z Datasheet Page 8 FCD850N80Z Datasheet Page 9 FCD850N80Z Datasheet Page 10 FCD850N80Z Datasheet Page 11

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FCU850N80Z Specifications

ManufacturerON Semiconductor
SeriesSuperFET® II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1315pF @ 100V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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