Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FCU850N80Z

FCU850N80Z

For Reference Only

Part Number FCU850N80Z
PNEDA Part # FCU850N80Z
Description MOSFET N-CH 800V 6A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 17,250
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCU850N80Z Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCU850N80Z
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCU850N80Z, FCU850N80Z Datasheet (Total Pages: 11, Size: 1,082.08 KB)
PDFFCD850N80Z Datasheet Cover
FCD850N80Z Datasheet Page 2 FCD850N80Z Datasheet Page 3 FCD850N80Z Datasheet Page 4 FCD850N80Z Datasheet Page 5 FCD850N80Z Datasheet Page 6 FCD850N80Z Datasheet Page 7 FCD850N80Z Datasheet Page 8 FCD850N80Z Datasheet Page 9 FCD850N80Z Datasheet Page 10 FCD850N80Z Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FCU850N80Z Datasheet
  • where to find FCU850N80Z
  • ON Semiconductor

  • ON Semiconductor FCU850N80Z
  • FCU850N80Z PDF Datasheet
  • FCU850N80Z Stock

  • FCU850N80Z Pinout
  • Datasheet FCU850N80Z
  • FCU850N80Z Supplier

  • ON Semiconductor Distributor
  • FCU850N80Z Price
  • FCU850N80Z Distributor

FCU850N80Z Specifications

ManufacturerON Semiconductor
SeriesSuperFET® II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1315pF @ 100V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

FDD2570

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

4.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

80mOhm @ 4.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

62nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1907pF @ 75V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 70W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IXFT10N100

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

155nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

IXTQ32N65X

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

135mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2205pF @ 25V

FET Feature

-

Power Dissipation (Max)

500W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

AUIRF3315STRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

82mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPP65R660CFDAAKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

660mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

4.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

543pF @ 100V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

Recently Sold

T520B127M006ATE035

T520B127M006ATE035

KEMET

CAP TANT POLY 120UF 6.3V 3528

HCS3920FTL500

HCS3920FTL500

Stackpole Electronics

RES 500 UOHM 1% 5W 3920

SMBJ5373B-TP

SMBJ5373B-TP

Micro Commercial Co

DIODE ZENER 68V 5W DO214AA

TAJB106K016RNJ

TAJB106K016RNJ

CAP TANT 10UF 10% 16V 1411

NFE31PT222Z1E9L

NFE31PT222Z1E9L

Murata

FILTER LC(T) 2200PF SMD

HDSP-0770

HDSP-0770

Broadcom

DISPLAY 4X7 NUM RDP BCD HER

IS25CQ032-JBLE

IS25CQ032-JBLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 32M SPI 104MHZ 8SOIC

3362W-1-103

3362W-1-103

Bourns

TRIMMER 10K OHM 0.5W PC PIN SIDE

ST1S40IPUR

ST1S40IPUR

STMicroelectronics

IC REG BUCK ADJ 3A 8VFQFPN

ISL68137IRAZ-T7A

ISL68137IRAZ-T7A

Renesas Electronics America Inc.

IC REG CTRLR PMBUS 48QFN

W25Q64DWSSIG

W25Q64DWSSIG

Winbond Electronics

IC FLASH 64M SPI 104MHZ 8SOIC

ADP122AUJZ-3.3-R7

ADP122AUJZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 300MA TSOT5