FD800R17KE3B2NOSA1
For Reference Only
| Part Number | FD800R17KE3B2NOSA1 |
| PNEDA Part # | FD800R17KE3B2NOSA1 |
| Description | IGBT MODULE 1700V 800A |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,894 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 22 - May 27 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FD800R17KE3B2NOSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | FD800R17KE3B2NOSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Modules |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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FD800R17KE3B2NOSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | * |
| IGBT Type | - |
| Configuration | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Current - Collector (Ic) (Max) | - |
| Power - Max | - |
| Vce(on) (Max) @ Vge, Ic | - |
| Current - Collector Cutoff (Max) | - |
| Input Capacitance (Cies) @ Vce | - |
| Input | - |
| NTC Thermistor | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer Infineon Technologies Series * IGBT Type - Configuration - Voltage - Collector Emitter Breakdown (Max) - Current - Collector (Ic) (Max) - Power - Max - Vce(on) (Max) @ Vge, Ic - Current - Collector Cutoff (Max) - Input Capacitance (Cies) @ Vce - Input - NTC Thermistor - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Microsemi Corporation Series - IGBT Type Trench Field Stop Configuration Asymmetrical Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 110A Power - Max 357W Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A Current - Collector Cutoff (Max) 250µA Input Capacitance (Cies) @ Vce 5.34nF @ 25V Input Standard NTC Thermistor Yes Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP3 Supplier Device Package SP3 |
