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FDA16N50-F109

FDA16N50-F109

For Reference Only

Part Number FDA16N50-F109
PNEDA Part # FDA16N50-F109
Description MOSFET N-CH 500V 16.5A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,392
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDA16N50-F109 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDA16N50-F109
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDA16N50-F109, FDA16N50-F109 Datasheet (Total Pages: 8, Size: 1,669.17 KB)
PDFFDA16N50-F109 Datasheet Cover
FDA16N50-F109 Datasheet Page 2 FDA16N50-F109 Datasheet Page 3 FDA16N50-F109 Datasheet Page 4 FDA16N50-F109 Datasheet Page 5 FDA16N50-F109 Datasheet Page 6 FDA16N50-F109 Datasheet Page 7 FDA16N50-F109 Datasheet Page 8

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FDA16N50-F109 Specifications

ManufacturerON Semiconductor
SeriesUniFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1945pF @ 25V
FET Feature-
Power Dissipation (Max)205W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

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