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FDA18N50

FDA18N50

For Reference Only

Part Number FDA18N50
PNEDA Part # FDA18N50
Description MOSFET N-CH 500V 19A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,226
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDA18N50 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDA18N50
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDA18N50, FDA18N50 Datasheet (Total Pages: 10, Size: 1,781.32 KB)
PDFFDA18N50 Datasheet Cover
FDA18N50 Datasheet Page 2 FDA18N50 Datasheet Page 3 FDA18N50 Datasheet Page 4 FDA18N50 Datasheet Page 5 FDA18N50 Datasheet Page 6 FDA18N50 Datasheet Page 7 FDA18N50 Datasheet Page 8 FDA18N50 Datasheet Page 9 FDA18N50 Datasheet Page 10

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FDA18N50 Specifications

ManufacturerON Semiconductor
SeriesUniFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs265mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2860pF @ 25V
FET Feature-
Power Dissipation (Max)239W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

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