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FDB12N50FTM-WS

FDB12N50FTM-WS

For Reference Only

Part Number FDB12N50FTM-WS
PNEDA Part # FDB12N50FTM-WS
Description MOSFET N-CH 500V 11.5A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 17,016
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB12N50FTM-WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB12N50FTM-WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB12N50FTM-WS, FDB12N50FTM-WS Datasheet (Total Pages: 8, Size: 768.16 KB)
PDFFDB12N50FTM-WS Datasheet Cover
FDB12N50FTM-WS Datasheet Page 2 FDB12N50FTM-WS Datasheet Page 3 FDB12N50FTM-WS Datasheet Page 4 FDB12N50FTM-WS Datasheet Page 5 FDB12N50FTM-WS Datasheet Page 6 FDB12N50FTM-WS Datasheet Page 7 FDB12N50FTM-WS Datasheet Page 8

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FDB12N50FTM-WS Specifications

ManufacturerON Semiconductor
SeriesUniFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs700mOhm @ 6A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1395pF @ 25V
FET Feature-
Power Dissipation (Max)165W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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