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FDB2670

FDB2670

For Reference Only

Part Number FDB2670
PNEDA Part # FDB2670
Description MOSFET N-CH 200V 19A TO-263AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,930
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB2670 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB2670
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB2670, FDB2670 Datasheet (Total Pages: 5, Size: 83.65 KB)
PDFFDB2670 Datasheet Cover
FDB2670 Datasheet Page 2 FDB2670 Datasheet Page 3 FDB2670 Datasheet Page 4 FDB2670 Datasheet Page 5

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FDB2670 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C19A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1320pF @ 100V
FET Feature-
Power Dissipation (Max)93W (Tc)
Operating Temperature-65°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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