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FDB86360-F085

FDB86360-F085

For Reference Only

Part Number FDB86360-F085
PNEDA Part # FDB86360-F085
Description MOSFET N-CH 80V 110A TO263
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,074
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB86360-F085 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB86360-F085
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB86360-F085, FDB86360-F085 Datasheet (Total Pages: 6, Size: 911.59 KB)
PDFFDB86360-F085 Datasheet Cover
FDB86360-F085 Datasheet Page 2 FDB86360-F085 Datasheet Page 3 FDB86360-F085 Datasheet Page 4 FDB86360-F085 Datasheet Page 5 FDB86360-F085 Datasheet Page 6

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FDB86360-F085 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, PowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs253nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14600pF @ 25V
FET Feature-
Power Dissipation (Max)333W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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