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FDB8870

FDB8870

For Reference Only

Part Number FDB8870
PNEDA Part # FDB8870
Description MOSFET N-CH 30V 23A TO-263AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,106
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB8870 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB8870
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB8870, FDB8870 Datasheet (Total Pages: 13, Size: 531.16 KB)
PDFFDB8870 Datasheet Cover
FDB8870 Datasheet Page 2 FDB8870 Datasheet Page 3 FDB8870 Datasheet Page 4 FDB8870 Datasheet Page 5 FDB8870 Datasheet Page 6 FDB8870 Datasheet Page 7 FDB8870 Datasheet Page 8 FDB8870 Datasheet Page 9 FDB8870 Datasheet Page 10 FDB8870 Datasheet Page 11

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FDB8870 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.9mOhm @ 35A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs132nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5200pF @ 15V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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