FDB8896-F085
For Reference Only
| Part Number | FDB8896-F085 |
| PNEDA Part # | FDB8896-F085 |
| Description | MOSFET N-CH 30V 19A TO-263AB |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,960 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FDB8896-F085 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FDB8896-F085 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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FDB8896-F085 Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101, PowerTrench® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 93A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2525pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263AB |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer Vishay Siliconix Series LITTLE FOOT® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 39mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 520pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 2.3W (Ta), 8.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® ChipFet Dual Package / Case PowerPAK® ChipFET™ Dual |
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Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 690pF @ 25V FET Feature - Power Dissipation (Max) 3.13W (Ta), 107W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK (TO-262) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
