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FDB9503L-F085

FDB9503L-F085

For Reference Only

Part Number FDB9503L-F085
PNEDA Part # FDB9503L-F085
Description MOSFET P-CH 40V 110A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,104
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB9503L-F085 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB9503L-F085
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB9503L-F085, FDB9503L-F085 Datasheet (Total Pages: 7, Size: 885.24 KB)
PDFFDB9503L-F085 Datasheet Cover
FDB9503L-F085 Datasheet Page 2 FDB9503L-F085 Datasheet Page 3 FDB9503L-F085 Datasheet Page 4 FDB9503L-F085 Datasheet Page 5 FDB9503L-F085 Datasheet Page 6 FDB9503L-F085 Datasheet Page 7

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FDB9503L-F085 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, PowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs255nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds8320pF @ 20V
FET Feature-
Power Dissipation (Max)333W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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