Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDC365P

FDC365P

For Reference Only

Part Number FDC365P
PNEDA Part # FDC365P
Description MOSFET P-CH 35V 4.3A 6-SSOT
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,874
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDC365P Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDC365P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDC365P, FDC365P Datasheet (Total Pages: 8, Size: 366.77 KB)
PDFFDC365P Datasheet Cover
FDC365P Datasheet Page 2 FDC365P Datasheet Page 3 FDC365P Datasheet Page 4 FDC365P Datasheet Page 5 FDC365P Datasheet Page 6 FDC365P Datasheet Page 7 FDC365P Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDC365P Datasheet
  • where to find FDC365P
  • ON Semiconductor

  • ON Semiconductor FDC365P
  • FDC365P PDF Datasheet
  • FDC365P Stock

  • FDC365P Pinout
  • Datasheet FDC365P
  • FDC365P Supplier

  • ON Semiconductor Distributor
  • FDC365P Price
  • FDC365P Distributor

FDC365P Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)35V
Current - Continuous Drain (Id) @ 25°C4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs55mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds705pF @ 20V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT™-6
Package / CaseSOT-23-6 Thin, TSOT-23-6

The Products You May Be Interested In

ZVN4306AV

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

330mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

850mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

SIHH068N60E-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

68mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2650pF @ 100V

FET Feature

-

Power Dissipation (Max)

202W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 8 x 8

Package / Case

8-PowerTDFN

IPI80N03S4L03AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2.2V @ 90µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

9750pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IXTQ28N15P

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

NTMFS5C442NLT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

27A (Ta), 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 69W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

Recently Sold

0451004.MR

0451004.MR

Littelfuse

FUSE BRD MNT 4A 125VAC/VDC 2SMD

SMCJ36A-E3/57T

SMCJ36A-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 36V 58.1V DO214AB

AD1580ART-REEL

AD1580ART-REEL

Analog Devices

IC VREF SHUNT 1.225V SOT23

GRM43ER71A226KE01L

GRM43ER71A226KE01L

Murata

CAP CER 22UF 10V X7R 1812

KSZ9031RNXIC-TR

KSZ9031RNXIC-TR

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

SII1161CTU

SII1161CTU

Lattice Semiconductor Corporation

UXGA PANELLINK RECEIVER

NDS331N

NDS331N

ON Semiconductor

MOSFET N-CH 20V 1.3A SSOT3

APT2012SGC

APT2012SGC

Kingbright

LED GREEN CLEAR CHIP SMD

DF10S-T

DF10S-T

Diodes Incorporated

BRIDGE RECT 1PHASE 1KV 1A DF-S

MAX9011EUT+T

MAX9011EUT+T

Maxim Integrated

IC COMPARATOR TTL SOT23-6

AP2111MPG-13

AP2111MPG-13

Diodes Incorporated

IC USB SWITCH 2.45A CURR 8MSOP

MC34063ABD

MC34063ABD

STMicroelectronics

IC REG BUCK BST ADJ 1.5A 8SO