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FDC658P

FDC658P

For Reference Only

Part Number FDC658P
PNEDA Part # FDC658P
Description MOSFET P-CH 30V 4A SSOT-6
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,798
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDC658P Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDC658P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDC658P, FDC658P Datasheet (Total Pages: 5, Size: 239.87 KB)
PDFFDC658P Datasheet Cover
FDC658P Datasheet Page 2 FDC658P Datasheet Page 3 FDC658P Datasheet Page 4 FDC658P Datasheet Page 5

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FDC658P Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds750pF @ 15V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT™-6
Package / CaseSOT-23-6 Thin, TSOT-23-6

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