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FDC855N

FDC855N

For Reference Only

Part Number FDC855N
PNEDA Part # FDC855N
Description MOSFET N-CH 30V 6.1A 6-SSOT
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,736
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDC855N Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDC855N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDC855N, FDC855N Datasheet (Total Pages: 8, Size: 394.5 KB)
PDFFDC855N Datasheet Cover
FDC855N Datasheet Page 2 FDC855N Datasheet Page 3 FDC855N Datasheet Page 4 FDC855N Datasheet Page 5 FDC855N Datasheet Page 6 FDC855N Datasheet Page 7 FDC855N Datasheet Page 8

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FDC855N Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs27mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds655pF @ 15V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT™-6
Package / CaseSOT-23-6 Thin, TSOT-23-6

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