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FDD1600N10ALZ

FDD1600N10ALZ

For Reference Only

Part Number FDD1600N10ALZ
PNEDA Part # FDD1600N10ALZ
Description MOSFET N CH 100V 6.8A TO252-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 40,242
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDD1600N10ALZ Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDD1600N10ALZ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDD1600N10ALZ, FDD1600N10ALZ Datasheet (Total Pages: 12, Size: 1,150.82 KB)
PDFFDD1600N10ALZ Datasheet Cover
FDD1600N10ALZ Datasheet Page 2 FDD1600N10ALZ Datasheet Page 3 FDD1600N10ALZ Datasheet Page 4 FDD1600N10ALZ Datasheet Page 5 FDD1600N10ALZ Datasheet Page 6 FDD1600N10ALZ Datasheet Page 7 FDD1600N10ALZ Datasheet Page 8 FDD1600N10ALZ Datasheet Page 9 FDD1600N10ALZ Datasheet Page 10 FDD1600N10ALZ Datasheet Page 11

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FDD1600N10ALZ Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs160mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.61nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds225pF @ 50V
FET Feature-
Power Dissipation (Max)14.9W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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