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FDD1600N10ALZD

FDD1600N10ALZD

For Reference Only

Part Number FDD1600N10ALZD
PNEDA Part # FDD1600N10ALZD
Description MOSFET N-CH 100V 6.8A TO252-5L
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,874
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDD1600N10ALZD Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDD1600N10ALZD
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDD1600N10ALZD, FDD1600N10ALZD Datasheet (Total Pages: 14, Size: 947.15 KB)
PDFFDD1600N10ALZD Datasheet Cover
FDD1600N10ALZD Datasheet Page 2 FDD1600N10ALZD Datasheet Page 3 FDD1600N10ALZD Datasheet Page 4 FDD1600N10ALZD Datasheet Page 5 FDD1600N10ALZD Datasheet Page 6 FDD1600N10ALZD Datasheet Page 7 FDD1600N10ALZD Datasheet Page 8 FDD1600N10ALZD Datasheet Page 9 FDD1600N10ALZD Datasheet Page 10 FDD1600N10ALZD Datasheet Page 11

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FDD1600N10ALZD Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs160mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.61nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds225pF @ 50V
FET Feature-
Power Dissipation (Max)14.9W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252-4L
Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD

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