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FDD16AN08A0

FDD16AN08A0

For Reference Only

Part Number FDD16AN08A0
PNEDA Part # FDD16AN08A0
Description MOSFET N-CH 75V 50A D-PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 26,766
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDD16AN08A0 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDD16AN08A0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDD16AN08A0, FDD16AN08A0 Datasheet (Total Pages: 14, Size: 858.91 KB)
PDFFDD16AN08A0_NF054 Datasheet Cover
FDD16AN08A0_NF054 Datasheet Page 2 FDD16AN08A0_NF054 Datasheet Page 3 FDD16AN08A0_NF054 Datasheet Page 4 FDD16AN08A0_NF054 Datasheet Page 5 FDD16AN08A0_NF054 Datasheet Page 6 FDD16AN08A0_NF054 Datasheet Page 7 FDD16AN08A0_NF054 Datasheet Page 8 FDD16AN08A0_NF054 Datasheet Page 9 FDD16AN08A0_NF054 Datasheet Page 10 FDD16AN08A0_NF054 Datasheet Page 11

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FDD16AN08A0 Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1874pF @ 25V
FET Feature-
Power Dissipation (Max)135W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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