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FDD2612

FDD2612

For Reference Only

Part Number FDD2612
PNEDA Part # FDD2612
Description MOSFET N-CH 200V 4.9A D-PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,356
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDD2612 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDD2612
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDD2612, FDD2612 Datasheet (Total Pages: 5, Size: 110.96 KB)
PDFFDD2612 Datasheet Cover
FDD2612 Datasheet Page 2 FDD2612 Datasheet Page 3 FDD2612 Datasheet Page 4 FDD2612 Datasheet Page 5

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FDD2612 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs720mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds234pF @ 100V
FET Feature-
Power Dissipation (Max)42W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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