Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDD5N50FTM-WS

FDD5N50FTM-WS

For Reference Only

Part Number FDD5N50FTM-WS
PNEDA Part # FDD5N50FTM-WS
Description MOSFET N-CH 500V 3.5A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,474
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 24 - May 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDD5N50FTM-WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDD5N50FTM-WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDD5N50FTM-WS, FDD5N50FTM-WS Datasheet (Total Pages: 7, Size: 765.93 KB)
PDFFDD5N50FTM-WS Datasheet Cover
FDD5N50FTM-WS Datasheet Page 2 FDD5N50FTM-WS Datasheet Page 3 FDD5N50FTM-WS Datasheet Page 4 FDD5N50FTM-WS Datasheet Page 5 FDD5N50FTM-WS Datasheet Page 6 FDD5N50FTM-WS Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDD5N50FTM-WS Datasheet
  • where to find FDD5N50FTM-WS
  • ON Semiconductor

  • ON Semiconductor FDD5N50FTM-WS
  • FDD5N50FTM-WS PDF Datasheet
  • FDD5N50FTM-WS Stock

  • FDD5N50FTM-WS Pinout
  • Datasheet FDD5N50FTM-WS
  • FDD5N50FTM-WS Supplier

  • ON Semiconductor Distributor
  • FDD5N50FTM-WS Price
  • FDD5N50FTM-WS Distributor

FDD5N50FTM-WS Specifications

ManufacturerON Semiconductor
SeriesUniFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.55Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds650pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

RSU002P03T106

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

250mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 10V

FET Feature

-

Power Dissipation (Max)

200mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

UMT3

Package / Case

SC-70, SOT-323

IRF630NLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

575pF @ 25V

FET Feature

-

Power Dissipation (Max)

82W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

SPI11N60CFDHKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

440mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRFSL23N20D102P

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1960pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 170W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

NP109N055PUK-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.2mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

189nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11250pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 250W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

021702.5MXP

021702.5MXP

Littelfuse

FUSE GLASS 2.5A 250VAC 5X20MM

AD8556ARZ

AD8556ARZ

Analog Devices

IC OPAMP ZERO-DRIFT 1 CIRC 8SOIC

SMCJ36A

SMCJ36A

Taiwan Semiconductor Corporation

TVS DIODE 36V 58.1V SMC

3314G-1-103E

3314G-1-103E

Bourns

TRIMMER 10K OHM 0.25W GW TOP ADJ

NTHD4102PT1G

NTHD4102PT1G

ON Semiconductor

MOSFET 2P-CH 20V 2.9A CHIPFET

AS5145B-HSSM

AS5145B-HSSM

ams

ROTARY ENCODER MAGNETIC 1024PPR

MBR0540T1G

MBR0540T1G

ON Semiconductor

DIODE SCHOTTKY 40V 500MA SOD123

74279221111

74279221111

Wurth Electronics

FERRITE BEAD 110 OHM 1206 1LN

STW14NM50

STW14NM50

STMicroelectronics

MOSFET N-CH 550V 14A TO-247

MIC47100YMME

MIC47100YMME

Microchip Technology

IC REG LINEAR POS ADJ 1A 8MSOP

IRF9321TRPBF

IRF9321TRPBF

Infineon Technologies

MOSFET P-CH 30V 15A 8-SOIC

IHLP2525CZERR33M01

IHLP2525CZERR33M01

Vishay Dale

FIXED IND 330NH 20A 3.9 MOHM SMD