FDD6685
For Reference Only
| Part Number | FDD6685 |
| PNEDA Part # | FDD6685 |
| Description | MOSFET P-CH 30V 11A DPAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 25,200 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 25 - Jun 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FDD6685 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FDD6685 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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FDD6685 Specifications
| Manufacturer | ON Semiconductor |
| Series | PowerTrench® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 5V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1715pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 77A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 35mOhm @ 60A, 10V Vgs(th) (Max) @ Id 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs 640nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 25V FET Feature - Power Dissipation (Max) 568W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package ISOTOP® Package / Case SOT-227-4, miniBLOC |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
