FDD8445-F085P
For Reference Only
| Part Number | FDD8445-F085P |
| PNEDA Part # | FDD8445-F085P |
| Description | NMOS DPAK 40V 8.7 MOHM |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,012 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 20 - Jun 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FDD8445-F085P Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FDD8445-F085P |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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FDD8445-F085P Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101, PowerTrench® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 59nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4050pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252, (D-Pak) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 10A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 12.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4480pF @ 75V FET Feature - Power Dissipation (Max) 2.7W (Ta), 113W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Power56 Package / Case 8-PowerTDFN |
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 385mOhm @ 1.1A, 10V Vgs(th) (Max) @ Id 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 190pF @ 50V FET Feature - Power Dissipation (Max) 580mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |
