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FDD86110

FDD86110

For Reference Only

Part Number FDD86110
PNEDA Part # FDD86110
Description MOSFET N-CH 100V 12.5A DPAK-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 52,332
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDD86110 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDD86110
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDD86110, FDD86110 Datasheet (Total Pages: 8, Size: 490.32 KB)
PDFFDD86110 Datasheet Cover
FDD86110 Datasheet Page 2 FDD86110 Datasheet Page 3 FDD86110 Datasheet Page 4 FDD86110 Datasheet Page 5 FDD86110 Datasheet Page 6 FDD86110 Datasheet Page 7 FDD86110 Datasheet Page 8

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FDD86110 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C12.5A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs10.2mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2265pF @ 50V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 127W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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