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FDD86367

FDD86367

For Reference Only

Part Number FDD86367
PNEDA Part # FDD86367
Description MOSFET N-CHANNEL 80V 100A TO252
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,370
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDD86367 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDD86367
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDD86367, FDD86367 Datasheet (Total Pages: 8, Size: 992.81 KB)
PDFFDD86367 Datasheet Cover
FDD86367 Datasheet Page 2 FDD86367 Datasheet Page 3 FDD86367 Datasheet Page 4 FDD86367 Datasheet Page 5 FDD86367 Datasheet Page 6 FDD86367 Datasheet Page 7 FDD86367 Datasheet Page 8

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FDD86367 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, PowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs88nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4840pF @ 40V
FET Feature-
Power Dissipation (Max)227W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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