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FDFMA2P859T

FDFMA2P859T

For Reference Only

Part Number FDFMA2P859T
PNEDA Part # FDFMA2P859T
Description MOSFET P-CH 20V 3A MICROFET
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,394
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDFMA2P859T Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDFMA2P859T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDFMA2P859T, FDFMA2P859T Datasheet (Total Pages: 10, Size: 396.12 KB)
PDFFDFMA2P859T Datasheet Cover
FDFMA2P859T Datasheet Page 2 FDFMA2P859T Datasheet Page 3 FDFMA2P859T Datasheet Page 4 FDFMA2P859T Datasheet Page 5 FDFMA2P859T Datasheet Page 6 FDFMA2P859T Datasheet Page 7 FDFMA2P859T Datasheet Page 8 FDFMA2P859T Datasheet Page 9 FDFMA2P859T Datasheet Page 10

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FDFMA2P859T Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs120mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds435pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.4W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicroFET 2x2 Thin
Package / Case6-UDFN Exposed Pad

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