Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDG361N

FDG361N

For Reference Only

Part Number FDG361N
PNEDA Part # FDG361N
Description MOSFET N-CH 100V 0.6A SC70-6
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,834
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDG361N Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDG361N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDG361N, FDG361N Datasheet (Total Pages: 5, Size: 80.83 KB)
PDFFDG361N Datasheet Cover
FDG361N Datasheet Page 2 FDG361N Datasheet Page 3 FDG361N Datasheet Page 4 FDG361N Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDG361N Datasheet
  • where to find FDG361N
  • ON Semiconductor

  • ON Semiconductor FDG361N
  • FDG361N PDF Datasheet
  • FDG361N Stock

  • FDG361N Pinout
  • Datasheet FDG361N
  • FDG361N Supplier

  • ON Semiconductor Distributor
  • FDG361N Price
  • FDG361N Distributor

FDG361N Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs500mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds153pF @ 50V
FET Feature-
Power Dissipation (Max)420mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-88 (SC-70-6)
Package / Case6-TSSOP, SC-88, SOT-363

The Products You May Be Interested In

IPP65R110CFDXKSA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CFD2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

31.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1.3mA

Gate Charge (Qg) (Max) @ Vgs

118nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3240pF @ 100V

FET Feature

-

Power Dissipation (Max)

277.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

DMN3033LSN-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

30mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

755pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-59-3

Package / Case

TO-236-3, SC-59, SOT-23-3

RQJ0303PGDQA#H6

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

68mOhm @ 1.6A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

+10V, -20V

Input Capacitance (Ciss) (Max) @ Vds

625pF @ 10V

FET Feature

-

Power Dissipation (Max)

800mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-MPAK

Package / Case

TO-236-3, SC-59, SOT-23-3

FDPF12N50NZT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET-II™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

11.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

520mOhm @ 5.75A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 400V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1235pF @ 25V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

TSM60NB099CF C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

38A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

99mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

62nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2587pF @ 100V

FET Feature

-

Power Dissipation (Max)

69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ITO-220S

Package / Case

TO-220-3 Full Pack

Recently Sold

0466005.NRHF

0466005.NRHF

Littelfuse

FUSE BOARD MNT 5A 32VAC/VDC 1206

MCR22-8G

MCR22-8G

ON Semiconductor

THYRISTOR SCR 1.5A 600V TO-92

IS43TR16128CL-125KBLI

IS43TR16128CL-125KBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 96TWBGA

ARF444

ARF444

Microsemi

PWR MOSFET RF N-CH 900V TO-247AD

APT1608F3C

APT1608F3C

Kingbright

EMITTER IR 940NM 50MA 603

PMV65XP,215

PMV65XP,215

Nexperia

MOSFET P-CH 20V 2.8A SOT-23

LTC2943IDD

LTC2943IDD

Linear Technology/Analog Devices

IC SUPERVISOR

J111

J111

ON Semiconductor

JFET N-CH 35V 625MW TO92

ADF4113BRU

ADF4113BRU

Analog Devices

IC SYNTH PLL RF 4.0GHZ 16-TSSOP

STM32L433CCU6

STM32L433CCU6

STMicroelectronics

IC MCU 32BIT 256KB FLASH 48QFPN

74FCT3807SOGI

74FCT3807SOGI

IDT, Integrated Device Technology

IC CLK BUFFER 1:10 100MHZ 20SOIC

BH1726NUC-E2

BH1726NUC-E2

Rohm Semiconductor

SENSOR OPT AMBIENT WSON008X2120