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FDI150N10

FDI150N10

For Reference Only

Part Number FDI150N10
PNEDA Part # FDI150N10
Description MOSFET N-CH 100V 57A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 21,312
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDI150N10 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDI150N10
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDI150N10, FDI150N10 Datasheet (Total Pages: 10, Size: 667.62 KB)
PDFFDI150N10 Datasheet Cover
FDI150N10 Datasheet Page 2 FDI150N10 Datasheet Page 3 FDI150N10 Datasheet Page 4 FDI150N10 Datasheet Page 5 FDI150N10 Datasheet Page 6 FDI150N10 Datasheet Page 7 FDI150N10 Datasheet Page 8 FDI150N10 Datasheet Page 9 FDI150N10 Datasheet Page 10

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FDI150N10 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs16mOhm @ 49A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs69nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4760pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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