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FDI3632

FDI3632

For Reference Only

Part Number FDI3632
PNEDA Part # FDI3632
Description MOSFET N-CH 100V 80A TO-262AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,426
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDI3632 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDI3632
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDI3632, FDI3632 Datasheet (Total Pages: 11, Size: 656.66 KB)
PDFFDI3632 Datasheet Cover
FDI3632 Datasheet Page 2 FDI3632 Datasheet Page 3 FDI3632 Datasheet Page 4 FDI3632 Datasheet Page 5 FDI3632 Datasheet Page 6 FDI3632 Datasheet Page 7 FDI3632 Datasheet Page 8 FDI3632 Datasheet Page 9 FDI3632 Datasheet Page 10 FDI3632 Datasheet Page 11

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FDI3632 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6000pF @ 25V
FET Feature-
Power Dissipation (Max)310W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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