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FDMA86108LZ

FDMA86108LZ

For Reference Only

Part Number FDMA86108LZ
PNEDA Part # FDMA86108LZ
Description MOSFET N-CH 100V 2.2A 6MLP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 23,712
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDMA86108LZ Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDMA86108LZ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDMA86108LZ, FDMA86108LZ Datasheet (Total Pages: 8, Size: 493.19 KB)
PDFFDMA86108LZ Datasheet Cover
FDMA86108LZ Datasheet Page 2 FDMA86108LZ Datasheet Page 3 FDMA86108LZ Datasheet Page 4 FDMA86108LZ Datasheet Page 5 FDMA86108LZ Datasheet Page 6 FDMA86108LZ Datasheet Page 7 FDMA86108LZ Datasheet Page 8

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FDMA86108LZ Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs243mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds163pF @ 50V
FET Feature-
Power Dissipation (Max)2.4W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-MicroFET (2x2)
Package / Case6-VDFN Exposed Pad

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