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FDMS1D2N03DSD

FDMS1D2N03DSD

For Reference Only

Part Number FDMS1D2N03DSD
PNEDA Part # FDMS1D2N03DSD
Description PT11N 30/12 & PT11N 30/12
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,546
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 10 - Jun 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDMS1D2N03DSD Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDMS1D2N03DSD
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
FDMS1D2N03DSD, FDMS1D2N03DSD Datasheet (Total Pages: 13, Size: 339.49 KB)
PDFFDMS1D2N03DSD Datasheet Cover
FDMS1D2N03DSD Datasheet Page 2 FDMS1D2N03DSD Datasheet Page 3 FDMS1D2N03DSD Datasheet Page 4 FDMS1D2N03DSD Datasheet Page 5 FDMS1D2N03DSD Datasheet Page 6 FDMS1D2N03DSD Datasheet Page 7 FDMS1D2N03DSD Datasheet Page 8 FDMS1D2N03DSD Datasheet Page 9 FDMS1D2N03DSD Datasheet Page 10 FDMS1D2N03DSD Datasheet Page 11

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FDMS1D2N03DSD Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V
Vgs(th) (Max) @ Id2.5V @ 320µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V, 117nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1410pF @ 15V, 4860pF @ 15V
Power - Max2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PQFN (5x6)

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