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FDMS3669S

FDMS3669S

For Reference Only

Part Number FDMS3669S
PNEDA Part # FDMS3669S
Description MOSFET 2N-CH 30V 13A/18A PWR56
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,372
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDMS3669S Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDMS3669S
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
FDMS3669S, FDMS3669S Datasheet (Total Pages: 14, Size: 1,105.13 KB)
PDFFDMS3669S Datasheet Cover
FDMS3669S Datasheet Page 2 FDMS3669S Datasheet Page 3 FDMS3669S Datasheet Page 4 FDMS3669S Datasheet Page 5 FDMS3669S Datasheet Page 6 FDMS3669S Datasheet Page 7 FDMS3669S Datasheet Page 8 FDMS3669S Datasheet Page 9 FDMS3669S Datasheet Page 10 FDMS3669S Datasheet Page 11

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FDMS3669S Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13A, 18A
Rds On (Max) @ Id, Vgs10mOhm @ 13A, 10V
Vgs(th) (Max) @ Id2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1605pF @ 15V
Power - Max1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePower56

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