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FDP023N08B-F102

FDP023N08B-F102

For Reference Only

Part Number FDP023N08B-F102
PNEDA Part # FDP023N08B-F102
Description MOSFET N-CH 75V 120A TO-220-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 13,506
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDP023N08B-F102 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDP023N08B-F102
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDP023N08B-F102, FDP023N08B-F102 Datasheet (Total Pages: 12, Size: 748.8 KB)
PDFFDP023N08B-F102 Datasheet Cover
FDP023N08B-F102 Datasheet Page 2 FDP023N08B-F102 Datasheet Page 3 FDP023N08B-F102 Datasheet Page 4 FDP023N08B-F102 Datasheet Page 5 FDP023N08B-F102 Datasheet Page 6 FDP023N08B-F102 Datasheet Page 7 FDP023N08B-F102 Datasheet Page 8 FDP023N08B-F102 Datasheet Page 9 FDP023N08B-F102 Datasheet Page 10 FDP023N08B-F102 Datasheet Page 11

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FDP023N08B-F102 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.35mOhm @ 75A, 10V
Vgs(th) (Max) @ Id3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs195nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13765pF @ 37.5V
FET Feature-
Power Dissipation (Max)245W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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