Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDP120N10

FDP120N10

For Reference Only

Part Number FDP120N10
PNEDA Part # FDP120N10
Description MOSFET N-CH 100V 74A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 15,984
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDP120N10 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDP120N10
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDP120N10, FDP120N10 Datasheet (Total Pages: 10, Size: 712.86 KB)
PDFFDP120N10 Datasheet Cover
FDP120N10 Datasheet Page 2 FDP120N10 Datasheet Page 3 FDP120N10 Datasheet Page 4 FDP120N10 Datasheet Page 5 FDP120N10 Datasheet Page 6 FDP120N10 Datasheet Page 7 FDP120N10 Datasheet Page 8 FDP120N10 Datasheet Page 9 FDP120N10 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDP120N10 Datasheet
  • where to find FDP120N10
  • ON Semiconductor

  • ON Semiconductor FDP120N10
  • FDP120N10 PDF Datasheet
  • FDP120N10 Stock

  • FDP120N10 Pinout
  • Datasheet FDP120N10
  • FDP120N10 Supplier

  • ON Semiconductor Distributor
  • FDP120N10 Price
  • FDP120N10 Distributor

FDP120N10 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C74A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12mOhm @ 74A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs86nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5605pF @ 25V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

The Products You May Be Interested In

JAN2N7224

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/592

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

81mOhm @ 34A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

125nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

4W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-254AA

Package / Case

TO-254-3, TO-254AA (Straight Leads)

STH272N6F7-6AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™ F7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11000pF @ 25V

FET Feature

-

Power Dissipation (Max)

333W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

H2PAK-6

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

FDC796N_F077

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1444pF @ 15V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT™-6 FLMP

Package / Case

6-SSOT Flat-lead, SuperSOT™-6 FLMP

IRFB4110PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

210nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9620pF @ 50V

FET Feature

-

Power Dissipation (Max)

370W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SPP06N60C3HKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id

3.9V @ 260µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 25V

FET Feature

-

Power Dissipation (Max)

74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Recently Sold

1.5KE27AG

1.5KE27AG

Littelfuse

TVS DIODE 23.1V 37.5V AXIAL

24LC32A-I/ST

24LC32A-I/ST

Microchip Technology

IC EEPROM 32K I2C 400KHZ 8TSSOP

X9C503SIZT1

X9C503SIZT1

Renesas Electronics America Inc.

IC DGTL POT 50KOHM 100TAP 8SOIC

IXBT12N300HV

IXBT12N300HV

IXYS

IGBT 3000V 30A 160W TO268

0451007.MRL

0451007.MRL

Littelfuse

FUSE BRD MNT 7A 125VAC/VDC 2SMD

SIT9102AI-243N25E200.00000X

SIT9102AI-243N25E200.00000X

SiTIME

MEMS OSC XO 200.0000MHZ LVDS SMD

T491D106K050AT

T491D106K050AT

KEMET

CAP TANT 10UF 10% 50V 2917

ZHCS400TA

ZHCS400TA

Diodes Incorporated

DIODE SCHOTTKY 40V 400MA SOD323

CMSH1-40 TR13

CMSH1-40 TR13

Central Semiconductor Corp

DIODE SCHOTTKY 40V 1A SMB

MBR0520LT1G

MBR0520LT1G

ON Semiconductor

DIODE SCHOTTKY 20V 500MA SOD123

FW2500025Z

FW2500025Z

Diodes Incorporated

CRYSTAL 25MHZ 20PF SMD

LT1963AEST-3.3#TRPBF

LT1963AEST-3.3#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A SOT223-3