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FDP4D5N10C

FDP4D5N10C

For Reference Only

Part Number FDP4D5N10C
PNEDA Part # FDP4D5N10C
Description FET ENGR DEV-NOT REL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,884
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDP4D5N10C Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDP4D5N10C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDP4D5N10C, FDP4D5N10C Datasheet (Total Pages: 7, Size: 970.71 KB)
PDFFDP4D5N10C Datasheet Cover
FDP4D5N10C Datasheet Page 2 FDP4D5N10C Datasheet Page 3 FDP4D5N10C Datasheet Page 4 FDP4D5N10C Datasheet Page 5 FDP4D5N10C Datasheet Page 6 FDP4D5N10C Datasheet Page 7

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FDP4D5N10C Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C128A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 310µA
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5065pF @ 50V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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