Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDS6692A

FDS6692A

For Reference Only

Part Number FDS6692A
PNEDA Part # FDS6692A
Description MOSFET N-CH 30V 9A 8-SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,896
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDS6692A Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDS6692A
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDS6692A, FDS6692A Datasheet (Total Pages: 9, Size: 510 KB)
PDFFDS6692A Datasheet Cover
FDS6692A Datasheet Page 2 FDS6692A Datasheet Page 3 FDS6692A Datasheet Page 4 FDS6692A Datasheet Page 5 FDS6692A Datasheet Page 6 FDS6692A Datasheet Page 7 FDS6692A Datasheet Page 8 FDS6692A Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDS6692A Datasheet
  • where to find FDS6692A
  • ON Semiconductor

  • ON Semiconductor FDS6692A
  • FDS6692A PDF Datasheet
  • FDS6692A Stock

  • FDS6692A Pinout
  • Datasheet FDS6692A
  • FDS6692A Supplier

  • ON Semiconductor Distributor
  • FDS6692A Price
  • FDS6692A Distributor

FDS6692A Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1610pF @ 15V
FET Feature-
Power Dissipation (Max)1.47W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

TJ20S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

22.2mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

+10V, -20V

Input Capacitance (Ciss) (Max) @ Vds

1850pF @ 10V

FET Feature

-

Power Dissipation (Max)

41W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK+

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF7707

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

22mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2361pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSSOP

Package / Case

8-TSSOP (0.173", 4.40mm Width)

SPI07N60C3HKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id

3.9V @ 350µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

790pF @ 25V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

PMV48XPVL

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

55mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id

1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 10V

FET Feature

-

Power Dissipation (Max)

510mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

IRF620PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

5.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

800mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

260pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

RB496EATR

RB496EATR

Rohm Semiconductor

DIODE ARRAY SCHOTTKY 20V TSMD5

LNBH25LSPQR

LNBH25LSPQR

STMicroelectronics

IC REG CONV SAT TV 1OUT 24QFN

IRFR5305TRPBF

IRFR5305TRPBF

Infineon Technologies

MOSFET P-CH 55V 31A DPAK

STM32L452RET6

STM32L452RET6

STMicroelectronics

IC MCU 32BIT 512KB FLASH 64LQFP

1N4148WS-7-F

1N4148WS-7-F

Diodes Incorporated

DIODE GEN PURP 75V 150MA SOD323

MC9S08LH36CLH

MC9S08LH36CLH

NXP

IC MCU 8BIT 36KB FLASH 64LQFP

MCP42050-E/SL

MCP42050-E/SL

Microchip Technology

IC DGTL POT 50KOHM 256TAP 14SOIC

PS22056

PS22056

Powerex Inc.

MOD IPM 1200V 25A DIP

IRG4BC20KDSTRRP

IRG4BC20KDSTRRP

Infineon Technologies

IGBT 600V 16A 60W D2PAK

JANTX1N4148-1

JANTX1N4148-1

Microsemi

DIODE GEN PURP 75V 200MA DO35

CTX01-15473

CTX01-15473

Eaton - Electronics Division

FIXED INDUCTOR

T495D337K006ATE040

T495D337K006ATE040

KEMET

CAP TANT 330UF 10% 6.3V 2917