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FDT1600N10ALZ

FDT1600N10ALZ

For Reference Only

Part Number FDT1600N10ALZ
PNEDA Part # FDT1600N10ALZ
Description MOSFET N-CH 100V SOT-223-4
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,308
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDT1600N10ALZ Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDT1600N10ALZ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDT1600N10ALZ, FDT1600N10ALZ Datasheet (Total Pages: 12, Size: 853.73 KB)
PDFFDT1600N10ALZ Datasheet Cover
FDT1600N10ALZ Datasheet Page 2 FDT1600N10ALZ Datasheet Page 3 FDT1600N10ALZ Datasheet Page 4 FDT1600N10ALZ Datasheet Page 5 FDT1600N10ALZ Datasheet Page 6 FDT1600N10ALZ Datasheet Page 7 FDT1600N10ALZ Datasheet Page 8 FDT1600N10ALZ Datasheet Page 9 FDT1600N10ALZ Datasheet Page 10 FDT1600N10ALZ Datasheet Page 11

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FDT1600N10ALZ Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs160mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.77nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds225pF @ 50V
FET Feature-
Power Dissipation (Max)10.42W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223-4
Package / CaseTO-261-4, TO-261AA

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