FDU8870
For Reference Only
| Part Number | FDU8870 |
| PNEDA Part # | FDU8870 |
| Description | MOSFET N-CH 30V 160A I-PAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,736 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 22 - Jun 27 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FDU8870 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FDU8870 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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FDU8870 Specifications
| Manufacturer | ON Semiconductor |
| Series | PowerTrench® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 160A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 118nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5160pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-PAK |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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Manufacturer Infineon Technologies Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 90A Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16.9mOhm @ 51A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 162nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6484pF @ 50V FET Feature - Power Dissipation (Max) 417W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 11.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1456pF @ 12V FET Feature - Power Dissipation (Max) 1.3W (Ta), 52W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Alpha & Omega Semiconductor Inc. Series SDMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 9A (Ta), 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 22mOhm @ 9A, 10V Vgs(th) (Max) @ Id 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 30V FET Feature - Power Dissipation (Max) 3.1W (Ta), 42W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN (3x3) Package / Case 8-PowerVDFN |
