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FDV302P-NB8V001

FDV302P-NB8V001

For Reference Only

Part Number FDV302P-NB8V001
PNEDA Part # FDV302P-NB8V001
Description MOSFET P-CH 25V 120MA SOT-23
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,866
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDV302P-NB8V001 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDV302P-NB8V001
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDV302P-NB8V001, FDV302P-NB8V001 Datasheet (Total Pages: 4, Size: 63.55 KB)
PDFFDV302P-NB8V001 Datasheet Cover
FDV302P-NB8V001 Datasheet Page 2 FDV302P-NB8V001 Datasheet Page 3 FDV302P-NB8V001 Datasheet Page 4

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FDV302P-NB8V001 Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Rds On (Max) @ Id, Vgs10Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.31nC @ 4.5V
Vgs (Max)-8V
Input Capacitance (Ciss) (Max) @ Vds11pF @ 10V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3

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