Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDZ291P

FDZ291P

For Reference Only

Part Number FDZ291P
PNEDA Part # FDZ291P
Description MOSFET P-CH 20V 4.6A BGA
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,546
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDZ291P Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDZ291P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDZ291P, FDZ291P Datasheet (Total Pages: 6, Size: 242.79 KB)
PDFFDZ291P Datasheet Cover
FDZ291P Datasheet Page 2 FDZ291P Datasheet Page 3 FDZ291P Datasheet Page 4 FDZ291P Datasheet Page 5 FDZ291P Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDZ291P Datasheet
  • where to find FDZ291P
  • ON Semiconductor

  • ON Semiconductor FDZ291P
  • FDZ291P PDF Datasheet
  • FDZ291P Stock

  • FDZ291P Pinout
  • Datasheet FDZ291P
  • FDZ291P Supplier

  • ON Semiconductor Distributor
  • FDZ291P Price
  • FDZ291P Distributor

FDZ291P Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs40mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1010pF @ 10V
FET Feature-
Power Dissipation (Max)1.7W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package9-BGA (1.5x1.6)
Package / Case9-VFBGA

The Products You May Be Interested In

SFH154

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

75mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3370pF @ 25V

FET Feature

-

Power Dissipation (Max)

204W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

NTMFD4952NFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

Package / Case

8-PowerTDFN

FCA47N60F

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

73mOhm @ 23.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

8000pF @ 25V

FET Feature

-

Power Dissipation (Max)

417W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

AUIRF1010ZS

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2840pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FQA11N90-F109

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

11.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

960mOhm @ 5.7A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

94nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3500pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

Recently Sold

MCP1725T-3302E/MC

MCP1725T-3302E/MC

Microchip Technology

IC REG LINEAR 3.3V 500MA 8DFN

4608X-101-332LF

4608X-101-332LF

Bourns

RES ARRAY 7 RES 3.3K OHM 8SIP

MAX3218EAP+T

MAX3218EAP+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SSOP

PS2801C-4-A

PS2801C-4-A

CEL

OPTOISO 2.5KV 4CH TRANS 16SSOP

74438356150

74438356150

Wurth Electronics

FIXED IND 15UH 1.9A 230MOHM SMD

AD8032ARZ-REEL7

AD8032ARZ-REEL7

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

STM809MWX6F

STM809MWX6F

STMicroelectronics

IC MPU RESET CIRC 4.38V SOT23

4608X-102-471LF

4608X-102-471LF

Bourns

RES ARRAY 4 RES 470 OHM 8SIP

YC324-JK-071KL

YC324-JK-071KL

Yageo

RES ARRAY 4 RES 1K OHM 2012

ADM3490EARZ

ADM3490EARZ

Analog Devices

IC TRANSCEIVER FULL 1/1 8SOIC

LDK120M32R

LDK120M32R

STMicroelectronics

IC REG LINEAR 3.2V 200MA SOT23-5

CS5173EDR8G

CS5173EDR8G

ON Semiconductor

IC REG MULT CONFG ADJ 1.5A 8SOIC