FF150R12ME3GBOSA1
For Reference Only
| Part Number | FF150R12ME3GBOSA1 |
| PNEDA Part # | FF150R12ME3GBOSA1 |
| Description | IGBT MODULE VCES 1200V 150A |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,328 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FF150R12ME3GBOSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | FF150R12ME3GBOSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Modules |
| Datasheet |
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FF150R12ME3GBOSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| IGBT Type | Trench Field Stop |
| Configuration | Single Chopper |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 200A |
| Power - Max | 695W |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 150A |
| Current - Collector Cutoff (Max) | 5mA |
| Input Capacitance (Cies) @ Vce | 10.5nF @ 25V |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 125°C |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
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Manufacturer Microsemi Corporation Series - IGBT Type Trench Field Stop Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 100A Power - Max 250W Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 75A Current - Collector Cutoff (Max) 250µA Input Capacitance (Cies) @ Vce 4.62nF @ 25V Input Standard NTC Thermistor Yes Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Chassis Mount Package / Case SP1 Supplier Device Package SP1 |
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