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FF23MR12W1M1B11BOMA1

FF23MR12W1M1B11BOMA1

For Reference Only

Part Number FF23MR12W1M1B11BOMA1
PNEDA Part # FF23MR12W1M1B11BOMA1
Description MOSFET 2 N-CH 1200V 50A MODULE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,356
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 20 - Jul 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FF23MR12W1M1B11BOMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberFF23MR12W1M1B11BOMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
FF23MR12W1M1B11BOMA1, FF23MR12W1M1B11BOMA1 Datasheet (Total Pages: 7, Size: 476.62 KB)
PDFFF23MR12W1M1B11BOMA1 Datasheet Cover
FF23MR12W1M1B11BOMA1 Datasheet Page 2 FF23MR12W1M1B11BOMA1 Datasheet Page 3 FF23MR12W1M1B11BOMA1 Datasheet Page 4 FF23MR12W1M1B11BOMA1 Datasheet Page 5 FF23MR12W1M1B11BOMA1 Datasheet Page 6 FF23MR12W1M1B11BOMA1 Datasheet Page 7

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FF23MR12W1M1B11BOMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolSiC™+
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C50A
Rds On (Max) @ Id, Vgs23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs125nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds3950pF @ 800V
Power - Max20mW
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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